User profiles for "author:J Suñé"

Jordi Suñé

Professor of Electronics, IEEE Fellow, Universitat Autònoma de Barcelona
Verified email at uab.cat
Cited by 9786

[HTML][HTML] Conductance quantization in resistive random access memory

…, Y Liu, C Hu, J Teng, Q Liu, H Lv, J Suñé… - Nanoscale research …, 2015 - Springer
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure,
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …

[HTML][HTML] On the thermal models for resistive random access memory circuit simulation

…, C de Benito, SG Stavrinides, J Suñé… - Nanomaterials, 2021 - mdpi.com
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …

[HTML][HTML] Positive outcomes influence the rate and time to publication, but not the impact factor of publications of clinical trial results

P Suñé, JM Suñé, JB Montoro - PloS one, 2013 - journals.plos.org
Objectives Publication bias may affect the validity of evidence based medical decisions. The
aim of this study is to assess whether research outcomes affect the dissemination of clinical …

On the breakdown statistics of very thin SiO2 films

J Suñé, I Placencia, N Barniol, E Farrés, F Martin… - Thin solid films, 1990 - Elsevier
In accordance with the idea that the degradation of the SiO 2 network and the dielectric
breakdown are intimately related, a new model to describe the breakdown statistics of thin …

[HTML][HTML] Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

…, J Buckley, X Lian, E Miranda, F Pan, M Liu, J Suñé - Scientific reports, 2013 - nature.com
Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is
promising in novel memory and logic device applications. Understanding the physics of RS …

Quantum-size effects in hafnium-oxide resistive switching

…, D Jiménez, L Perniola, M Liu, J Suñé - Applied Physics …, 2013 - pubs.aip.org
Discrete changes of conductance of the order of G0 ¼2e2/h reported during the unipolar
reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size …

A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown

…, L Perniola, E Miranda, M Liu, J Suñé - IEEE electron device …, 2013 - ieeexplore.ieee.org
The set voltage distribution of Pt/HfO 2/Pt resistive switching memory is shown to fit well a
Weibull model with Weibull slope and scale factor increasing logarithmically with the …

Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/films

E Miranda, J Suñé - 2001 IEEE International Reliability Physics …, 2001 - ieeexplore.ieee.org
We have investigated the multiple-event dielectric breakdown of ultra-thin SiO/sub 2/films
used as gate insulators in MOS devices. A theoretical framework, based on the physics of …

Simulation of thermal reset transitions in resistive switching memories including quantum effects

…, F Campabadal, JB Roldán, J Suñé… - Journal of Applied …, 2014 - pubs.aip.org
An in-depth study of reset processes in RRAMs (Resistive Random Access Memories)
based on Ni/HfO 2/Si-n+ structures has been performed. To do so, we have developed a …

On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress …

EY Wu, J Suñé, W Lai - IEEE Transactions on Electron Devices, 2002 - ieeexplore.ieee.org
For pt. I see ibid., vol. 49, no. 12, p. 2131 (2002). The Weibull slope measurement
techniques described in Part I are used to determine Weibull slopes as function of thickness …