User profiles for "author:J Suñé"
Jordi SuñéProfessor of Electronics, IEEE Fellow, Universitat Autònoma de Barcelona Verified email at uab.cat Cited by 9786 |
[HTML][HTML] Conductance quantization in resistive random access memory
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure,
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …
[HTML][HTML] On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
[HTML][HTML] Positive outcomes influence the rate and time to publication, but not the impact factor of publications of clinical trial results
P Suñé, JM Suñé, JB Montoro - PloS one, 2013 - journals.plos.org
Objectives Publication bias may affect the validity of evidence based medical decisions. The
aim of this study is to assess whether research outcomes affect the dissemination of clinical …
aim of this study is to assess whether research outcomes affect the dissemination of clinical …
On the breakdown statistics of very thin SiO2 films
In accordance with the idea that the degradation of the SiO 2 network and the dielectric
breakdown are intimately related, a new model to describe the breakdown statistics of thin …
breakdown are intimately related, a new model to describe the breakdown statistics of thin …
[HTML][HTML] Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is
promising in novel memory and logic device applications. Understanding the physics of RS …
promising in novel memory and logic device applications. Understanding the physics of RS …
Quantum-size effects in hafnium-oxide resistive switching
Discrete changes of conductance of the order of G0 ¼2e2/h reported during the unipolar
reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size …
reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size …
A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown
The set voltage distribution of Pt/HfO 2/Pt resistive switching memory is shown to fit well a
Weibull model with Weibull slope and scale factor increasing logarithmically with the …
Weibull model with Weibull slope and scale factor increasing logarithmically with the …
Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/films
We have investigated the multiple-event dielectric breakdown of ultra-thin SiO/sub 2/films
used as gate insulators in MOS devices. A theoretical framework, based on the physics of …
used as gate insulators in MOS devices. A theoretical framework, based on the physics of …
Simulation of thermal reset transitions in resistive switching memories including quantum effects
An in-depth study of reset processes in RRAMs (Resistive Random Access Memories)
based on Ni/HfO 2/Si-n+ structures has been performed. To do so, we have developed a …
based on Ni/HfO 2/Si-n+ structures has been performed. To do so, we have developed a …
On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress …
For pt. I see ibid., vol. 49, no. 12, p. 2131 (2002). The Weibull slope measurement
techniques described in Part I are used to determine Weibull slopes as function of thickness …
techniques described in Part I are used to determine Weibull slopes as function of thickness …